Gases for Solar PV Cell Manufacturing
At INOXAP, we power the photovoltaic revolution. The creation of high-efficiency solar panel is not just a process; it’s a precise science. Every high-purity gas we supply is a critical ingredient, engineered to meet the exacting demands of modern solar PV cell manufacturing, enabling superior performance and durability.
SILANE (SiH₄)
INOXAP’s Silane is where the silicon journey begins. As the fundamental silicon source in chemical vapour deposition (CVD), it lays the foundation for the active layers that convert sunlight into energy. With unmatched purity and consistency, our Silane ensures defect-free deposition and higher efficiency across modern solar architectures, making it a cornerstone among gases for solar PV Cell Manufacturing.
Formula: SiH4 |
Characteristics: Colourless, Pungent Gas, Extremely Flammable, Pyrophoric
Applications:
- Forms amorphous and polycrystalline silicon layers in PECVD
- Enables high-quality tunnel oxide layers in TOPCon cells
- Used with Ammonia to create Si₃N₄ anti-reflective coatings
- Improves surface passivation and cell longevity
AMMONIA (NH₃)
INOXAP’s Ammonia is vital for forming silicon nitride anti-reflective coatings. These coatings are essential for gas solar panels, as they capture more sunlight and reflect less, directly boosting energy conversion efficiency and ensuring durability.
Formula: NH₃ |
Characteristics: Colourless Gas, Pungent Odour, Corrosive and Mildly Flammable
Applications:
- Nitrogen source in PECVD for Si₃N₄ coatings.
- Improves surface passivation and light capture.
- Used in wafer etching and cleaning during fabrication.
NITROUS OXIDE (N₂O)
INOXAP’s Nitrous Oxide provides the oxygen atoms needed for clean, uniform silicon oxide layers. Its use in deposition processes improves passivation, optical properties, and the long-term reliability of the photovoltaic cells, a critical step in solar PV cell gases integration.
Formula: N₂O |
Characteristics: Colourless Gas, Faint Odour, Oxidizing; Supports Combustion
Applications:
- Oxidising agent in LPCVD/PECVD processes.
- Forms silicon oxynitride layers for surface passivation.
- Improves optical absorption and electrical stability.
TRIMETHYL ALUMINUM (TMA)
INOXAP’s TMA enables the formation of ultra-thin, high-quality Al₂O₃ passivation layers through atomic layer deposition (ALD). These layers are fundamental to advanced cell architectures like PERC and TOPCon, reducing recombination and enhancing voltage output.
Formula: (CH)3Al3 |
Characteristics: Colourless, Pyrophoric Liquid, Highly Flammable, Toxic Vapours
Applications:
- 1/2″ MVCR ALD precursor for aluminum oxide passivation.
- Improves rear-side efficiency in PERC/TOPCon designs.
- Enhances dielectric and interface engineering.
BORON TRICHLORIDE (BCl₃)
INOXAP’s Boron Trichloride is key to precision plasma etching and boron doping for p-type junctions. It helps create ultra-fine cell features, enabling tighter process control and better energy conversion in silicon wafers.
Formula: BCl3 |
Characteristics: Colourless, Pungent Gas, Corrosive, Reacts with Moisture
Applications:
- Plasma etching of silicon and metal oxides.
- p-Type doping source for boron introduction.
- Removes native oxides and surface impurities.
PHOSPHINE (PH₃) + HYDROGEN (H₂)
Precision doping defines performance. INOXCVA’s Phosphine-Hydrogen mix introduces phosphorus atoms into silicon wafers to create n-type conductivity, forming the cell’s essential power-producing p-n junction. This precise combination is a vital example of specialised gases for solar PV cell performance.
Formula: PH₃ + H₂ |
Characteristics: Colourless Gas, Highly Toxic and Flammable
Applications:
- n-Type doping in CVD and ion-implantation.
- Used in PECVD/LPCVD systems for uniform layers.
- Hydrogen carrier ensures precise concentration control.
ULTRA-HIGH PURITY OXYGEN (O₂)
INOXAP’s Ultra-High Purity Oxygen enables the controlled thermal growth of silicon dioxide layers. These layers are essential for surface passivation and as gate dielectrics, making it a foundational element among gases for solar PV module manufacturing.
Formula: O₂ |
Characteristics: Colourless Gas Nontoxic, Highly Reactive
Applications:
- Thermal oxidation of silicon wafers for passivation layers.
- Used in PECVD and plasma etching for oxide deposition.
- Critical for high-efficiency solar cell junction formation.
HYDROGEN (H₂)
INOXAP’s Hydrogen serves as a carrier, reducing, annealing gas crucial in passivating defects in silicon layers. It neutralizes dangling bonds and defects in the silicon structure, which otherwise would act as recombination centers for electrons and holes, decreasing efficiency It creates an inert, controlled environment for deposition processes, ensuring defect-free films and stable cell performance, which is crucial for high-yield solar panel manufacturing.
Formula: H₂ |
Characteristics: Colourless, Odourless, Flammable Gas
Applications:
- Carrier and reducing gas in deposition systems.
- Aids annealing and hydrogenation of silicon films.
- Enables precise thermal control for uniform output.
DIBORANE (B₂H₆) + HYDROGEN (H₂)
INOXAP’s Diborane-Hydrogen mix is used for precise p-type doping, introducing boron atoms to create the cell’s charge-absorbing junction. This ensures optimal electrical characteristics for power generation.
Formula: B₂H₆ + H₂ |
Characteristics: Colourless Gas, Highly Toxic and Extremely Flammable
Applications:
- p-Type doping in CVD and ion-implantation.
- Used in PECVD/LPCVD systems for boron layer formation.
- Hydrogen carrier ensures safe delivery and concentration control.
NITROGEN TRIFLUORIDE (NF₃)
INOXAP’s NF₃ is the preferred cleaning agent for CVD chambers. It efficiently removes silicon-based residues, ensuring every deposition run starts with a pure surface, which is critical for high-quality film deposition and manufacturing yield.
Formula: NF₃ |
Characteristics: Colourless Gas, Oxidizer; Toxic by Decomposition
Applications:
- Cleans PECVD and CVD chambers.
- Enables uniform film deposition.
- Supports the anti-reflective coating process.
ULTRA-HIGH PURITY NITROGEN (N₂)
A pure atmosphere defines a perfect product. INOXAP’s Ultra-High Purity Nitrogen provides an inert, blanketing environment throughout solar cell manufacturing, preventing oxidation and contamination during critical high-temperature processes like diffusion and annealing.
Formula: N₂ |
Characteristics: Colourless, Odourless Gas, Nontoxic, Inert
Applications:
- VIST Carrier and purge gas in CVD, LPCVD, and PECVD systems.
- Maintains an inert atmosphere during wafer processing.
- Used in annealing and diffusion steps to prevent oxidation.
METHANE (CH₄)
Methane acts as a precursor for advanced carbon-based films and graphene layers. These materials are pioneering next-generation photovoltaics, offering enhanced durability and novel conductive pathways, showcasing the innovation driven by gases for solar panel manufacturing and advanced energy applications.
Formula: CH₄ |
Characteristics: Colourless, Odourless Gas, Flammable (5–15% in Air)
Applications:
- Deposits carbon films via CVD.
- Supports hydrogenation and surface passivation.
- Used in research for tandem and multi-junction solar cells.
Why INOXAP for Your Solar Manufacturing Needs?
The complex symphony of gases for solar cell manufacturing requires a partner with unwavering commitment to safety, quality and precision. From doping and deposition to etching and cleaning, each INOXAP product is bottled with precision, ensuring your solar panel gas processes achieve peak efficiency, yield, and return on investment.
Connect with INOXAP to equip your solar manufacturing with precision gases for peak efficiency and superior cell performance.
For more information, email us at info@inoxap.com or contact your INOX Air Products Sales Coordinator.